Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

Hsu Feng Chiu; San Lein Wu; Yee Shyi Chang; Shoou Jinn Chang; Jone Fang Chen; Shih Chang Tsai; Che Hua Hsu; Chien Ming Lai; Chia Wei Hsu; Osbert Cheng

doi:10.1063/1.4753997

Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

Hsu Feng Chiu, San Lein Wu, Yee Shyi Chang, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chien Ming Lai, Chia Wei Hsu, Osbert Cheng

微電子工程研究所

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The impact of post metal-deposition annealing (PMA) on the trap behavior of high-k/metal-gate metal-oxide-semiconductor field-effect transistors has been studied using drain current random telegraph noise (RTN). The RTN phenomenon is influenced by both trap positions and trap energy, thus corresponding with the PMA passivation mechanism. We found that trap positions in mono-metal-layer annealed (TiN annealed) devices are closer to the TiN/HfO ₂ interface due to the substitution of nitrogen atoms by oxygen atoms inside the TiN layer. However, replaced nitrogen atoms from TaN can passivate nitrogen defects in TiN that improves device characteristics in dual-metal-layer annealed (TiN/TaN annealed) devices.

原文	English
文章編號	122105
期刊	Applied Physics Letters
卷	101
發行號	12
DOIs	https://doi.org/10.1063/1.4753997
出版狀態	Published - 2012 9月 17

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.4753997

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@article{37dcd5512a01472a8b315084dd6a684f,

title = "Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise",

abstract = "The impact of post metal-deposition annealing (PMA) on the trap behavior of high-k/metal-gate metal-oxide-semiconductor field-effect transistors has been studied using drain current random telegraph noise (RTN). The RTN phenomenon is influenced by both trap positions and trap energy, thus corresponding with the PMA passivation mechanism. We found that trap positions in mono-metal-layer annealed (TiN annealed) devices are closer to the TiN/HfO 2 interface due to the substitution of nitrogen atoms by oxygen atoms inside the TiN layer. However, replaced nitrogen atoms from TaN can passivate nitrogen defects in TiN that improves device characteristics in dual-metal-layer annealed (TiN/TaN annealed) devices.",

author = "{Feng Chiu}, Hsu and {Lein Wu}, San and {Shyi Chang}, Yee and {Jinn Chang}, Shoou and {Fang Chen}, Jone and {Chang Tsai}, Shih and {Hua Hsu}, Che and {Ming Lai}, Chien and {Wei Hsu}, Chia and Osbert Cheng",

note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, under Contract No. NSC 101-2221-E-230-013.",

year = "2012",

month = sep,

day = "17",

doi = "10.1063/1.4753997",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

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T1 - Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

AU - Feng Chiu, Hsu

AU - Lein Wu, San

AU - Shyi Chang, Yee

AU - Jinn Chang, Shoou

AU - Fang Chen, Jone

AU - Chang Tsai, Shih

AU - Hua Hsu, Che

AU - Ming Lai, Chien

AU - Wei Hsu, Chia

AU - Cheng, Osbert

N1 - Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, under Contract No. NSC 101-2221-E-230-013.

PY - 2012/9/17

Y1 - 2012/9/17

N2 - The impact of post metal-deposition annealing (PMA) on the trap behavior of high-k/metal-gate metal-oxide-semiconductor field-effect transistors has been studied using drain current random telegraph noise (RTN). The RTN phenomenon is influenced by both trap positions and trap energy, thus corresponding with the PMA passivation mechanism. We found that trap positions in mono-metal-layer annealed (TiN annealed) devices are closer to the TiN/HfO 2 interface due to the substitution of nitrogen atoms by oxygen atoms inside the TiN layer. However, replaced nitrogen atoms from TaN can passivate nitrogen defects in TiN that improves device characteristics in dual-metal-layer annealed (TiN/TaN annealed) devices.

AB - The impact of post metal-deposition annealing (PMA) on the trap behavior of high-k/metal-gate metal-oxide-semiconductor field-effect transistors has been studied using drain current random telegraph noise (RTN). The RTN phenomenon is influenced by both trap positions and trap energy, thus corresponding with the PMA passivation mechanism. We found that trap positions in mono-metal-layer annealed (TiN annealed) devices are closer to the TiN/HfO 2 interface due to the substitution of nitrogen atoms by oxygen atoms inside the TiN layer. However, replaced nitrogen atoms from TaN can passivate nitrogen defects in TiN that improves device characteristics in dual-metal-layer annealed (TiN/TaN annealed) devices.

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JF - Applied Physics Letters

IS - 12

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ER -

Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

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