Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

Si Hua Chen, Shang Wei Lian, Tzung Rang Wu, Tay Rong Chang, Jia Ming Liou, Darsen D. Lu, Kuo Hsing Kao, Nan Yow Chen, Wen Jay Lee, Jyun Hwei Tsai

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.

原文English
文章編號8704283
頁(從 - 到)2509-2512
頁數4
期刊IEEE Transactions on Electron Devices
66
發行號6
DOIs
出版狀態Published - 2019 六月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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