Impact of SMT-induced edge dislocation positions to NFET performance

Tzer Min Shen, Shui Jinn Wang, Zhi Ren Xiao, Chung Cheng Wu, Jeff Wu, Carlos H. Diaz

研究成果: Conference contribution

摘要

In summary, this work highlights the impact of SMT-induced edge-dislocation positions in nFET device design. Based on experimental results and atomic transport simulation, dislocations with reduced proximity and depth would increase the amount of SFs and TDs which induce high parasitic resistance and high Iboff leakage current together. Trade-off among strained mobility, parasitic resistance and Iboff should be made for advanced device design.

原文English
主出版物標題73rd Annual Device Research Conference, DRC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁數1
ISBN(電子)9781467381345
DOIs
出版狀態Published - 2015 八月 3
事件73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
持續時間: 2015 六月 212015 六月 24

出版系列

名字Device Research Conference - Conference Digest, DRC
2015-August
ISSN(列印)1548-3770

Other

Other73rd Annual Device Research Conference, DRC 2015
國家United States
城市Columbus
期間15-06-2115-06-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • 引用此

    Shen, T. M., Wang, S. J., Xiao, Z. R., Wu, C. C., Wu, J., & Diaz, C. H. (2015). Impact of SMT-induced edge dislocation positions to NFET performance. 於 73rd Annual Device Research Conference, DRC 2015 [7175621] (Device Research Conference - Conference Digest, DRC; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175621