Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Cheng Wen Kuo, San Lein Wu, Shoou Jinn Chang, Yao Tsung Huang, Yao Chin Cheng, Osbert Cheng

研究成果: Article

11 引文 (Scopus)

摘要

The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter αH, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (L SVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of L SVG versus VGS -VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.

原文English
文章編號123501
期刊Applied Physics Letters
97
發行號12
DOIs
出版狀態Published - 2010 九月 20

指紋

metal oxide semiconductors
transistors
low frequencies
scattering coefficients
field effect transistors
attenuation
curvature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

Kuo, Cheng Wen ; Wu, San Lein ; Chang, Shoou Jinn ; Huang, Yao Tsung ; Cheng, Yao Chin ; Cheng, Osbert. / Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors. 於: Applied Physics Letters. 2010 ; 卷 97, 編號 12.
@article{34694c1c4dc647a98ce8c5f0e67bf8a4,
title = "Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors",
abstract = "The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter αH, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (L SVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of L SVG versus VGS -VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.",
author = "Kuo, {Cheng Wen} and Wu, {San Lein} and Chang, {Shoou Jinn} and Huang, {Yao Tsung} and Cheng, {Yao Chin} and Osbert Cheng",
year = "2010",
month = "9",
day = "20",
doi = "10.1063/1.3491211",
language = "English",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors. / Kuo, Cheng Wen; Wu, San Lein; Chang, Shoou Jinn; Huang, Yao Tsung; Cheng, Yao Chin; Cheng, Osbert.

於: Applied Physics Letters, 卷 97, 編號 12, 123501, 20.09.2010.

研究成果: Article

TY - JOUR

T1 - Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

AU - Kuo, Cheng Wen

AU - Wu, San Lein

AU - Chang, Shoou Jinn

AU - Huang, Yao Tsung

AU - Cheng, Yao Chin

AU - Cheng, Osbert

PY - 2010/9/20

Y1 - 2010/9/20

N2 - The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter αH, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (L SVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of L SVG versus VGS -VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.

AB - The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter αH, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (L SVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of L SVG versus VGS -VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.

UR - http://www.scopus.com/inward/record.url?scp=77957121358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957121358&partnerID=8YFLogxK

U2 - 10.1063/1.3491211

DO - 10.1063/1.3491211

M3 - Article

AN - SCOPUS:77957121358

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 123501

ER -