Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Cheng Wen Kuo, San Lein Wu, Shoou Jinn Chang, Yao Tsung Huang, Yao Chin Cheng, Osbert Cheng

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter αH, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (L SVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of L SVG versus VGS -VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.

原文English
文章編號123501
期刊Applied Physics Letters
97
發行號12
DOIs
出版狀態Published - 2010 9月 20

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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