Impact of uniaxial strain on random telegraph noise in high-k/metal gate pMOSFETs

Po Chin Huang, Jone F. Chen, Shih Chang Tsai, San Lein Wu, Kai Shiang Tsai, Tsung Hsien Kao, Yean Kuen Fang, Chien Ming Lai, Chia Wei Hsu, Yi Wen Chen, Osbert Cheng

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The random telegraph noise (RTN) characteristics of high- k (HK)/metal gate (MG) pMOSFETs with uniaxial compressive strain have been investigated. The configuration-coordinate diagram and band diagram are both established by extracting trap parameters, including capture and emission time, activation energy for capture and emission, trap energy level, and trap location in gate dielectric. Through a comparison of RTN results and gate-leakage current density (JG) between HK/MG pMOSFETs with and without uniaxial compressive strain in channel, it is found that the trap position from the insulator/semiconductor interface is reduced in the uniaxial compressive strained HK/MG pMOSFETs. This is reasonably attributed to the strain-increased tunneling barrier height and out-of-plane effective mass, which brings about the reduction in the tunneling attenuation length. Meanwhile, it can also be demonstrated by the lower JG in uniaxial compressive strained HK/MG pMOSFETs.

原文English
文章編號7031365
頁(從 - 到)988-993
頁數6
期刊IEEE Transactions on Electron Devices
62
發行號3
DOIs
出版狀態Published - 2015 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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