Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs

Malkundi Puttaveerappa Vijay Kumar, Chia Ying Hu, Kuo-Hsing Kao, Yao Jen Lee, Tien Sheng Chao

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

This paper presents the impacts of an advanced shell doping profile (SDP) on the electrical characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS), and ON-current by a numerical simulator. Due to the potential mirroring effect, a special observation stemming from the SDP, the carriers can enter the intrinsic region from the doped surface reducing the series resistance though the junction depth is smaller than 5 nm. The proposed doping profile provides an additional structure parameter for designing a JL FET showing the mitigated short-channel effects, a better SS, and a higher ON/OFF current ratio for sub-20-nm channel length. Compared with traditional devices, a JL FET with the proposed SDP shows a lower OFF-current by decades and less electrical characteristics variation caused by the nanowire diameter variation. The SDP not only reduces the series resistance of a JL FET but also poses a possible solution of avoiding the negative impacts of quantum confinement for advanced technology nodes.

原文English
文章編號7244201
頁(從 - 到)3541-3546
頁數6
期刊IEEE Transactions on Electron Devices
62
發行號11
DOIs
出版狀態Published - 2015 九月 7

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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