Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

Yi Jung Liu; Chien Chang Huang; Tai You Chen; Chi Shiang Hsu; Jian Kai Liou; Tsung Yuan Tsai; Wen Chau Liu

doi:10.1364/OE.19.014662

Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

Yi Jung Liu, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Jian Kai Liou, Tsung Yuan Tsai, Wen Chau Liu

微電子工程研究所

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

摘要

A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

原文	English
頁（從 - 到）	14662-14670
頁數	9
期刊	Optics Express
卷	19
發行號	15
DOIs	https://doi.org/10.1364/OE.19.014662
出版狀態	Published - 2011 7月 18

All Science Journal Classification (ASJC) codes

原子與分子物理與光學

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10.1364/OE.19.014662

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abstract = "A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.",

author = "Liu, {Yi Jung} and Huang, {Chien Chang} and Chen, {Tai You} and Hsu, {Chi Shiang} and Liou, {Jian Kai} and Tsai, {Tsung Yuan} and Liu, {Wen Chau}",

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AU - Liou, Jian Kai

AU - Tsai, Tsung Yuan

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AB - A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

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Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

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