Implementation of high-power GaN-based LEDs with a textured 3-D backside reflector formed by inserting a self-assembled SiO2 nanosphere monolayer

Jian Kai Liou, Po Cheng Chou, Chun Chia Chen, Yu Chih Chang, Wei Chou Hsu, Shiou Ying Cheng, Jung Hui Tsai, Wen Chan Liu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Enhanced light extraction efficiency (LEE) of high-power GaN-based light-emitting diodes (LEDs) is achieved by inserting a self-assembled SiO 2 nanosphere monolayer between the substrate and backside reflectors. Due to the presence of concave surfaces and photonic crystal-like air voids, downward photons emitted from multiple quantum well toward 3-D backside reflectors, could be reflected, scattered, and redirected into arbitrary directions for light extraction. These textured 3-D backside reflectors with an SiO2 nanosphere monolayer could also extract the lateral light inside device into the normal direction and improve LEE. As compared with a conventional LED without a backside reflector and an LED with a planar hybrid backside reflector, at 350 mA, the studied device with a 3-D hybrid backside reflector exhibits 136.4% (165%) and 23.6% (27.4%) enhancements in light output power (luminous flux) without the degradation of electrical properties. Higher light intensities in light emission mapping image and far-field pattern are also obtained. These results show that a textured 3-D backside reflector could be easily formed by inserting an SiO2 nanosphere monolayer to significantly enhance the performance of high-power GaN-based LEDs.

原文English
文章編號6712052
頁(從 - 到)831-837
頁數7
期刊IEEE Transactions on Electron Devices
61
發行號3
DOIs
出版狀態Published - 2014 3月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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