TY - JOUR
T1 - Implementing controlled-NOT gate based on free spin qubits with semiconductor quantum-dot array
AU - Wu, Yin Zhong
AU - Zhang, Wei Min
PY - 2005/8/15
Y1 - 2005/8/15
N2 - Based on electron spins in semiconductor quantum dots as qubits, a new quantum controlled-NOT (CNOT) gate is constructed in solid nanostructure without resorting to spin-spin interactions. Single-electron tunneling technology and coherent quantum-dot cellular-automaton architecture are used to generate an ancillary charge entangled state. Using the ancillary charge entangled state as an intermediate state, we obtain a spin entangled state and design a CNOT gate by using only single-spin rotations.
AB - Based on electron spins in semiconductor quantum dots as qubits, a new quantum controlled-NOT (CNOT) gate is constructed in solid nanostructure without resorting to spin-spin interactions. Single-electron tunneling technology and coherent quantum-dot cellular-automaton architecture are used to generate an ancillary charge entangled state. Using the ancillary charge entangled state as an intermediate state, we obtain a spin entangled state and design a CNOT gate by using only single-spin rotations.
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U2 - 10.1209/epl/i2005-10117-0
DO - 10.1209/epl/i2005-10117-0
M3 - Article
AN - SCOPUS:23944483530
SN - 0295-5075
VL - 71
SP - 524
EP - 529
JO - Journal de Physique (Paris), Lettres
JF - Journal de Physique (Paris), Lettres
IS - 4
ER -