Importance of sample preheating in oxidation of GexSi 1-x

W. S. Liu, E. W. Lee, M. A. Nicolet, V. Arbet-Engels, K. L. Wang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Wet thermal oxidation at 1000°C of a 470-nm-thick epitaxial Ge 0.36Si0.64 layer on (100)Si produces oxides of different composition depending on the details of the oxidation procedure. When a cold sample is directly exposed to the hot steam, the surface layer of the oxide contains both Ge and Si. Only SiO2 forms if a preheated sample is exposed to the hot steam. The effect is not present for dry oxidation and is attributed to the known enhancement of the wet oxidation rate by Ge, coupled with the transient warm up of a sample when it is immersed cold in hot steam.

原文English
頁(從 - 到)3626-3627
頁數2
期刊Journal of Applied Physics
71
發行號7
DOIs
出版狀態Published - 1992

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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