Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

Sachit Grover; David L. Young; Vincenzo Lasalvia; Jian V. Li; Howard M. Branz; Paul Stradins; Charles W. Teplin

doi:10.1109/PVSC.2013.6744097

Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

Sachit Grover
, David L. Young
, Vincenzo Lasalvia
, Jian V. Li
, Howard M. Branz
, Paul Stradins
, Charles W. Teplin

航空太空工程學系

研究成果: Conference contribution

1 引文斯高帕斯（Scopus）

摘要

We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V _OC) ∼600 mV and efficiency exceeding 10%.

原文	English
主出版物標題	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	51-53
頁數	3
ISBN（列印）	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744097
出版狀態	Published - 2013
事件	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States 持續時間: 2013 6月 16 → 2013 6月 21

出版系列

名字	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN（列印）	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
國家/地區	United States
城市	Tampa, FL
期間	13-06-16 → 13-06-21

UN SDG

此研究成果有助於以下永續發展目標

SDG 7 經濟實惠的清潔能源

All Science Journal Classification (ASJC) codes

控制與系統工程
工業與製造工程
電氣與電子工程

存取文件

10.1109/PVSC.2013.6744097

其它文件與鏈接

引用此

Grover, S., Young, D. L., Lasalvia, V., Li, J. V., Branz, H. M., Stradins, P., & Teplin, C. W. (2013). Improved 750°C epitaxial crystal silicon solar cells through impurity reduction. 於 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (頁 51-53). 文章 6744097 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744097

@inproceedings{4bd42d97758040ebbc4f049ba89cbcc2,

title = "Improved 750°C epitaxial crystal silicon solar cells through impurity reduction",

abstract = "We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V OC) ∼600 mV and efficiency exceeding 10\%.",

author = "Sachit Grover and Young, \{David L.\} and Vincenzo Lasalvia and Li, \{Jian V.\} and Branz, \{Howard M.\} and Paul Stradins and Teplin, \{Charles W.\}",

year = "2013",

doi = "10.1109/PVSC.2013.6744097",

language = "English",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "51--53",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

address = "United States",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Grover, S, Young, DL, Lasalvia, V, Li, JV, Branz, HM, Stradins, P & Teplin, CW 2013, Improved 750°C epitaxial crystal silicon solar cells through impurity reduction. 於 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744097, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., 頁 51-53, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 13-06-16. https://doi.org/10.1109/PVSC.2013.6744097

Improved 750°C epitaxial crystal silicon solar cells through impurity reduction. / Grover, Sachit; Young, David L.; Lasalvia, Vincenzo 等.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 51-53 6744097 (Conference Record of the IEEE Photovoltaic Specialists Conference).

研究成果: Conference contribution

TY - GEN

T1 - Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

AU - Grover, Sachit

AU - Young, David L.

AU - Lasalvia, Vincenzo

AU - Li, Jian V.

AU - Branz, Howard M.

AU - Stradins, Paul

AU - Teplin, Charles W.

PY - 2013

Y1 - 2013

N2 - We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V OC) ∼600 mV and efficiency exceeding 10%.

AB - We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V OC) ∼600 mV and efficiency exceeding 10%.

UR - https://www.scopus.com/pages/publications/84896477847

UR - https://www.scopus.com/pages/publications/84896477847#tab=citedBy

U2 - 10.1109/PVSC.2013.6744097

DO - 10.1109/PVSC.2013.6744097

M3 - Conference contribution

AN - SCOPUS:84896477847

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 51

EP - 53

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Grover S, Young DL, Lasalvia V, Li JV, Branz HM, Stradins P 等. Improved 750°C epitaxial crystal silicon solar cells through impurity reduction. 於 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 51-53. 6744097. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744097

Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

摘要

出版系列

Other

UN SDG

All Science Journal Classification (ASJC) codes

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