Improved breakdown in LP-MOCVD grown n+-GaAs/δ(P+)-GalnP/n-GaAs heterojunction camel-gate FET

W. S. Lour, W. L. Chang, S. T. Young, W. C. Liu

研究成果: Article同行評審

40 引文 斯高帕斯(Scopus)

摘要

Fabrication of n+-GaAs/δ(P )-GaInP/n-GaAs heterojunction camel-gate field-effect transistors by LP-MOCVD is reported. The active channel was tri-step doped to obtain a high-barrier camel diode. A δ(P+)-GaInP layer was employed to offer a high valence band, offset as a hole barrier, as well as an enhanced conduction band, offset for good electron confinement. A camel diode using this material structure shows a barrier height > 1.2eV and a very high breakdown voltage of 33 V. The measured transconductance is 140mS/mm with a unity current gain frequency of 17GHz for a 1 × 50μm2 device.

原文English
頁(從 - 到)814-815
頁數2
期刊Electronics Letters
34
發行號8
DOIs
出版狀態Published - 1998 四月 16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

指紋 深入研究「Improved breakdown in LP-MOCVD grown n<sup>+</sup>-GaAs/δ(P<sup>+</sup>)-GalnP/n-GaAs heterojunction camel-gate FET」主題。共同形成了獨特的指紋。

引用此