Fabrication of n+-GaAs/δ(P )-GaInP/n-GaAs heterojunction camel-gate field-effect transistors by LP-MOCVD is reported. The active channel was tri-step doped to obtain a high-barrier camel diode. A δ(P+)-GaInP layer was employed to offer a high valence band, offset as a hole barrier, as well as an enhanced conduction band, offset for good electron confinement. A camel diode using this material structure shows a barrier height > 1.2eV and a very high breakdown voltage of 33 V. The measured transconductance is 140mS/mm with a unity current gain frequency of 17GHz for a 1 × 50μm2 device.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering