Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Kuan Wei Lee, Nan Ying Yang, Mau-phon Houng, Yeong-Her Wang, Po Wen Sze

研究成果: Article

19 引文 斯高帕斯(Scopus)

摘要

The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.

原文English
文章編號263501
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
87
發行號26
DOIs
出版狀態Published - 2005 十二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此