Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Kuan Wei Lee; Nan Ying Yang; Mau Phon Houng; Yeong Her Wang; Po Wen Sze

doi:10.1063/1.2151252

Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Kuan Wei Lee
, Nan Ying Yang
, Mau Phon Houng
, Yeong Her Wang
, Po Wen Sze

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

摘要

The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.

原文	English
文章編號	263501
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	87
發行號	26
DOIs	https://doi.org/10.1063/1.2151252
出版狀態	Published - 2005

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.2151252

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title = "Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate",

abstract = "The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.",

author = "Lee, \{Kuan Wei\} and Yang, \{Nan Ying\} and Houng, \{Mau Phon\} and Wang, \{Yeong Her\} and Sze, \{Po Wen\}",

note = "Funding Information: This work was supported in part by the National Science Council of Taiwan under Contracts No. NSC 93-2120-M-007-007, NSC 93-2215-E-006-003, NSC 92-2215-E-006-008, and MOE Program for Promoting Academic Excellence of Universities under the Grant No. A-91E-FA08-1-4.",

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doi = "10.1063/1.2151252",

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AU - Lee, Kuan Wei

AU - Yang, Nan Ying

AU - Houng, Mau Phon

AU - Wang, Yeong Her

AU - Sze, Po Wen

N1 - Funding Information: This work was supported in part by the National Science Council of Taiwan under Contracts No. NSC 93-2120-M-007-007, NSC 93-2215-E-006-003, NSC 92-2215-E-006-008, and MOE Program for Promoting Academic Excellence of Universities under the Grant No. A-91E-FA08-1-4.

PY - 2005

Y1 - 2005

N2 - The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.

AB - The In0.52 Al0.48 As In0.53 Ga0.47 As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10-15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.

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U2 - 10.1063/1.2151252

DO - 10.1063/1.2151252

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SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263501

ER -

Improved breakdown voltage and impact ionization in InAlAsInGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

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