Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

S. F. Yu; Ray Ming Lin; S. J. Chang; J. R. Chen; J. Y. Chu; C. T. Kuo; Z. Y. Jiao

doi:10.1109/JDT.2012.2205367

Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

S. F. Yu, Ray Ming Lin, S. J. Chang, J. R. Chen, J. Y. Chu, C. T. Kuo, Z. Y. Jiao

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 Acm^-2 , compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.

原文	English
文章編號	6243151
頁（從 - 到）	239-243
頁數	5
期刊	IEEE/OSA Journal of Display Technology
卷	9
發行號	4
DOIs	https://doi.org/10.1109/JDT.2012.2205367
出版狀態	Published - 2013

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程

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10.1109/JDT.2012.2205367

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AU - Yu, S. F.

AU - Lin, Ray Ming

AU - Chang, S. J.

AU - Chen, J. R.

AU - Chu, J. Y.

AU - Kuo, C. T.

AU - Jiao, Z. Y.

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AB - In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 Acm-2 , compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.

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Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

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