Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

D. H. Hsieh, A. J. Tzou, T. S. Kao, F. I. Lai, D. W. Lin, B. C. Lin, T. C. Lu, W. C. Lai, C. H. Chen, H. C. Kuo

研究成果: Article

23 引文 (Scopus)

摘要

In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

原文English
頁(從 - 到)27145-27151
頁數7
期刊Optics Express
23
發行號21
DOIs
出版狀態Published - 2015 十月 19

指紋

carrier injection
surface emitting lasers
cavities
electrons
threshold currents
nitrides
lasing
conduction bands
current density
interference
output

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此文

Hsieh, D. H., Tzou, A. J., Kao, T. S., Lai, F. I., Lin, D. W., Lin, B. C., ... Kuo, H. C. (2015). Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer. Optics Express, 23(21), 27145-27151. https://doi.org/10.1364/OE.23.027145
Hsieh, D. H. ; Tzou, A. J. ; Kao, T. S. ; Lai, F. I. ; Lin, D. W. ; Lin, B. C. ; Lu, T. C. ; Lai, W. C. ; Chen, C. H. ; Kuo, H. C. / Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer. 於: Optics Express. 2015 ; 卷 23, 編號 21. 頁 27145-27151.
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abstract = "In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.",
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Hsieh, DH, Tzou, AJ, Kao, TS, Lai, FI, Lin, DW, Lin, BC, Lu, TC, Lai, WC, Chen, CH & Kuo, HC 2015, 'Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer', Optics Express, 卷 23, 編號 21, 頁 27145-27151. https://doi.org/10.1364/OE.23.027145

Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer. / Hsieh, D. H.; Tzou, A. J.; Kao, T. S.; Lai, F. I.; Lin, D. W.; Lin, B. C.; Lu, T. C.; Lai, W. C.; Chen, C. H.; Kuo, H. C.

於: Optics Express, 卷 23, 編號 21, 19.10.2015, p. 27145-27151.

研究成果: Article

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AU - Hsieh, D. H.

AU - Tzou, A. J.

AU - Kao, T. S.

AU - Lai, F. I.

AU - Lin, D. W.

AU - Lin, B. C.

AU - Lu, T. C.

AU - Lai, W. C.

AU - Chen, C. H.

AU - Kuo, H. C.

PY - 2015/10/19

Y1 - 2015/10/19

N2 - In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

AB - In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

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