Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded inxGa1-xAs channel

Yih Juan Li; Wei Chou Hsu; I. Liang Chen; Ching Sung Lee; Yeong Jia Chen; Ikai Lo

doi:10.1116/1.1781662

Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded in_xGa_1-xAs channel

Yih Juan Li, Wei Chou Hsu, I. Liang Chen, Ching Sung Lee, Yeong Jia Chen, Ikai Lo

微電子工程研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The metamorphic structure of InAlAs/InGaAs high electron mobility transistor (HEMT) with symmetric graded In_xGa_1-xAs channel was discussed. The improved electron mobility of 9500 (30 600) cm²/V s at 300 (77) K was achieved due to the lower interface roughness scattering. It was found that the measured current gain cutoff frequency f_T amd maximum oscillation frequency f_max for a 1.5μm gate device were 18.9 and 48.4 GHz. The results show that the structure was used for the high power, high frequency and low noise device applications.

原文	English
頁（從 - 到）	2429-2433
頁數	5
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	22
發行號	5
DOIs	https://doi.org/10.1116/1.1781662
出版狀態	Published - 2004 9月

All Science Journal Classification (ASJC) codes

凝聚態物理學
電氣與電子工程

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10.1116/1.1781662

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title = "Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded inxGa1-xAs channel",

abstract = "The metamorphic structure of InAlAs/InGaAs high electron mobility transistor (HEMT) with symmetric graded InxGa1-xAs channel was discussed. The improved electron mobility of 9500 (30 600) cm2/V s at 300 (77) K was achieved due to the lower interface roughness scattering. It was found that the measured current gain cutoff frequency fT amd maximum oscillation frequency fmax for a 1.5μm gate device were 18.9 and 48.4 GHz. The results show that the structure was used for the high power, high frequency and low noise device applications.",

author = "Li, {Yih Juan} and Hsu, {Wei Chou} and Chen, {I. Liang} and Lee, {Ching Sung} and Chen, {Yeong Jia} and Ikai Lo",

year = "2004",

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doi = "10.1116/1.1781662",

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T1 - Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded inxGa1-xAs channel

AU - Li, Yih Juan

AU - Hsu, Wei Chou

AU - Chen, I. Liang

AU - Lee, Ching Sung

AU - Chen, Yeong Jia

AU - Lo, Ikai

PY - 2004/9

Y1 - 2004/9

N2 - The metamorphic structure of InAlAs/InGaAs high electron mobility transistor (HEMT) with symmetric graded InxGa1-xAs channel was discussed. The improved electron mobility of 9500 (30 600) cm2/V s at 300 (77) K was achieved due to the lower interface roughness scattering. It was found that the measured current gain cutoff frequency fT amd maximum oscillation frequency fmax for a 1.5μm gate device were 18.9 and 48.4 GHz. The results show that the structure was used for the high power, high frequency and low noise device applications.

AB - The metamorphic structure of InAlAs/InGaAs high electron mobility transistor (HEMT) with symmetric graded InxGa1-xAs channel was discussed. The improved electron mobility of 9500 (30 600) cm2/V s at 300 (77) K was achieved due to the lower interface roughness scattering. It was found that the measured current gain cutoff frequency fT amd maximum oscillation frequency fmax for a 1.5μm gate device were 18.9 and 48.4 GHz. The results show that the structure was used for the high power, high frequency and low noise device applications.

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Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded inxGa1-xAs channel

摘要

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Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded in_xGa_1-xAs channel