Improved detection sensitivity of Pt/β-Ga2O3/GaN hydrogen sensor diode

Jheng Tai Yan, Ching Ting Lee

研究成果: Article同行評審

50 引文 斯高帕斯(Scopus)

摘要

The hydrogen sensing characteristics of Pt/GaN (metal/semiconductor, MS) type and Pt/β-Ga2O3/GaN (metal/reactive insulator/semiconductor, MIS) type hydrogen sensor diodes under hydrogen containing ambience were measured at room temperature. The MIS-type sensor diodes were fabricated in which the β-Ga2O3 oxide layers were directly grown on GaN layer using a photoelectrochemical oxidation method and then annealed in O2 ambience at 700 °C for 2 h. The Pt/β-Ga2O3/GaN sensors exhibited high hydrogen sensing ability. The experimental results demonstrated that the β-Ga2O3 layer played an important role in the MIS-type hydrogen sensor diodes.

原文English
頁(從 - 到)192-197
頁數6
期刊Sensors and Actuators, B: Chemical
143
發行號1
DOIs
出版狀態Published - 2009 十二月 4

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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