Improved electrical and thermal stability of solution-processed Li-doped ZnO thin-film transistors

Bo Yuan Su, Sheng Yuan Chu, Yung Der Juang

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

The effects of lithium (Li) doping on the performance of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. Li-doped ZnO films as channel layers are chemically prepared by spin coating the gel with an aqueous solution of zinc acetate dihydrate, Li nitrate, and ethanolamine. TFT devices fabricated with 2 at.% Li-doped films show a good field-effect mobility of 3.31 cm 2/V·s, a subthreshold slope of 0.82 V/dec, and an on-off current ratio of over 10 5. These TFT devices also show good thermal and electrical stability, which is mainly attributed to the compact surface morphology of the channel layer, small carrier concentration, and less oxygen deficiency, which reduces the interface electrical trapping at the gate insulator.

原文English
文章編號6129494
頁(從 - 到)700-704
頁數5
期刊IEEE Transactions on Electron Devices
59
發行號3
DOIs
出版狀態Published - 2012 三月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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