Improved electrical performance of organic thin-film transistors with modified high-K dielectrics

Fu Chiao Wu, Bo Liang Yeh, Tzu Hsiu Chou, Jen Sue Chen, Min Ruei Tsai, Horng Long Cheng, Wei Yang Chou

研究成果: Conference contribution

摘要

We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.

原文English
主出版物標題AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面183-186
頁數4
ISBN(電子)9784990875336
出版狀態Published - 2017 八月 8
事件24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
持續時間: 2017 七月 42017 七月 7

出版系列

名字AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Other

Other24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
國家/地區Japan
城市Kyoto
期間17-07-0417-07-07

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 計算機理論與數學

指紋

深入研究「Improved electrical performance of organic thin-film transistors with modified high-K dielectrics」主題。共同形成了獨特的指紋。

引用此