Improved electrical performance of organic thin-film transistors with modified high-K dielectrics

Fu Chiao Wu, Bo Liang Yeh, Tzu Hsiu Chou, Jen Sue Chen, Min Ruei Tsai, Horng Long Cheng, Wei Yang Chou

研究成果: Conference contribution

摘要

We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.

原文English
主出版物標題AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面183-186
頁數4
ISBN(電子)9784990875336
出版狀態Published - 2017 八月 8
事件24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
持續時間: 2017 七月 42017 七月 7

出版系列

名字AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Other

Other24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
國家Japan
城市Kyoto
期間17-07-0417-07-07

指紋

Thin film transistors
Polyimides
Hafnium
Surface tension
Permittivity
Microstructure
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computational Theory and Mathematics

引用此文

Wu, F. C., Yeh, B. L., Chou, T. H., Chen, J. S., Tsai, M. R., Cheng, H. L., & Chou, W. Y. (2017). Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. 於 AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings (頁 183-186). [8006115] (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc..
Wu, Fu Chiao ; Yeh, Bo Liang ; Chou, Tzu Hsiu ; Chen, Jen Sue ; Tsai, Min Ruei ; Cheng, Horng Long ; Chou, Wei Yang. / Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 頁 183-186 (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).
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title = "Improved electrical performance of organic thin-film transistors with modified high-K dielectrics",
abstract = "We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.",
author = "Wu, {Fu Chiao} and Yeh, {Bo Liang} and Chou, {Tzu Hsiu} and Chen, {Jen Sue} and Tsai, {Min Ruei} and Cheng, {Horng Long} and Chou, {Wei Yang}",
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Wu, FC, Yeh, BL, Chou, TH, Chen, JS, Tsai, MR, Cheng, HL & Chou, WY 2017, Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. 於 AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8006115, AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 183-186, 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017, Kyoto, Japan, 17-07-04.

Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. / Wu, Fu Chiao; Yeh, Bo Liang; Chou, Tzu Hsiu; Chen, Jen Sue; Tsai, Min Ruei; Cheng, Horng Long; Chou, Wei Yang.

AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 183-186 8006115 (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

研究成果: Conference contribution

TY - GEN

T1 - Improved electrical performance of organic thin-film transistors with modified high-K dielectrics

AU - Wu, Fu Chiao

AU - Yeh, Bo Liang

AU - Chou, Tzu Hsiu

AU - Chen, Jen Sue

AU - Tsai, Min Ruei

AU - Cheng, Horng Long

AU - Chou, Wei Yang

PY - 2017/8/8

Y1 - 2017/8/8

N2 - We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.

AB - We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.

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M3 - Conference contribution

AN - SCOPUS:85034445683

T3 - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

SP - 183

EP - 186

BT - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Wu FC, Yeh BL, Chou TH, Chen JS, Tsai MR, Cheng HL 等. Improved electrical performance of organic thin-film transistors with modified high-K dielectrics. 於 AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 183-186. 8006115. (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).