TY - GEN
T1 - Improved electrical performance of organic thin-film transistors with modified high-K dielectrics
AU - Wu, Fu Chiao
AU - Yeh, Bo Liang
AU - Chou, Tzu Hsiu
AU - Chen, Jen Sue
AU - Tsai, Min Ruei
AU - Cheng, Horng Long
AU - Chou, Wei Yang
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology,
PY - 2017/8/8
Y1 - 2017/8/8
N2 - We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.
AB - We used a high dielectric constant material, hafnium dioxide (HfO2), as the dielectric layer and N,N'-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) as the active layer to fabricate low voltage-driven organic thin-film transistor (OTFT) devices. After modifying the surface of HfO2 by polyimide (PI), the electrical characteristics and stability of PTCDI-C13-based OTFTs were considerably improved. We observed that the insulating property of HfO2/PI was superior to HfO2. The microstructures of PTCDI-C13 grown on HfO2/PI were better than those grown on HfO2, resulting from smaller interfacial tension of PTCDI-C13 with PI than with HfO2. The interfacial trap density of PTCDI-C13 with HfO2/PI is less than PTCDI-C13 with native HfO2. Consequently, the devices with HfO2/PI showed enhanced electrical performance compared than those with HfO2.
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M3 - Conference contribution
AN - SCOPUS:85034445683
T3 - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
SP - 183
EP - 186
BT - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
Y2 - 4 July 2017 through 7 July 2017
ER -