Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Zhi-Kai Zhuang, Shui-Jinn Wang, Sheng Yi Wang, Hsiang Yi Chen, Chun Kai Liao, Sheng Tsang Hsiao, Bing Cheng You, Rong-Ming Ko

研究成果: Conference contribution

原文English
主出版物標題 2018 International Conference on Solid State Devices and Materials (SSDM’18)
出版地 Tokyo, Japan
出版狀態Published - 2018 九月 11

引用此

Zhuang, Z-K., Wang, S-J., Wang, S. Y., Chen, H. Y., Liao, C. K., Hsiao, S. T., You, B. C., & Ko, R-M. (2018). Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric. 於 2018 International Conference on Solid State Devices and Materials (SSDM’18)