Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

S. J. Chang, C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu, S. C. Chen

研究成果: Letter

57 引文 斯高帕斯(Scopus)

摘要

GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.

原文English
頁(從 - 到)129-131
頁數3
期刊IEEE Electron Device Letters
24
發行號3
DOIs
出版狀態Published - 2003 三月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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