Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED

T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, Y. P. Hsu, W. C. Lai, J. K. Sheu

研究成果: Conference contribution

5 引文 斯高帕斯(Scopus)

摘要

Electrostatic discharge (ESD) induced electrical pulse is one of the main reliability concerns of optoelectronic devices. In this paper, a modulation doped Al0.12Ga0.88SN/GaN Superlattice are introduced to improve ESD reliability in Nitrided-based LEDs. The basic idea of this structure is to spread pulse current when LEDs suffer ESD. The ESD-induced pulse current would be spread laterally in 2D electron gas made by Al0.12Ga0.88SN /GaN herterostructure. Therefore the probability of junction breakdown would be lower.

原文English
主出版物標題2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面77-78
頁數2
ISBN(電子)0780381394, 9780780381391
DOIs
出版狀態Published - 2003
事件International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
持續時間: 2003 十二月 102003 十二月 12

出版系列

名字2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
國家/地區United States
城市Washington
期間03-12-1003-12-12

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

指紋

深入研究「Improved ESD reliability by using a modulation doped Al<sub>0.12</sub>Ga<sub>0.88</sub>N/GaN superlattice in nitride-based LED」主題。共同形成了獨特的指紋。

引用此