Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED

T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, Y. P. Hsu, W. C. Lai, J. K. Sheu

研究成果: Conference contribution

5 引文 (Scopus)

摘要

Electrostatic discharge (ESD) induced electrical pulse is one of the main reliability concerns of optoelectronic devices. In this paper, a modulation doped Al0.12Ga0.88SN/GaN Superlattice are introduced to improve ESD reliability in Nitrided-based LEDs. The basic idea of this structure is to spread pulse current when LEDs suffer ESD. The ESD-induced pulse current would be spread laterally in 2D electron gas made by Al0.12Ga0.88SN /GaN herterostructure. Therefore the probability of junction breakdown would be lower.

原文English
主出版物標題2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面77-78
頁數2
ISBN(電子)0780381394, 9780780381391
DOIs
出版狀態Published - 2003 一月 1
事件International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
持續時間: 2003 十二月 102003 十二月 12

出版系列

名字2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
國家United States
城市Washington
期間03-12-1003-12-12

指紋

Electrostatic discharge
Nitrides
Light emitting diodes
Modulation
Electron gas
Optoelectronic devices

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Wen, T. C., Chang, S. J., Su, Y. K., Wu, L. W., Kuo, C. H., Hsu, Y. P., ... Sheu, J. K. (2003). Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED. 於 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (頁 77-78). [1272004] (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272004
Wen, T. C. ; Chang, S. J. ; Su, Y. K. ; Wu, L. W. ; Kuo, C. H. ; Hsu, Y. P. ; Lai, W. C. ; Sheu, J. K. / Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. 頁 77-78 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).
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title = "Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED",
abstract = "Electrostatic discharge (ESD) induced electrical pulse is one of the main reliability concerns of optoelectronic devices. In this paper, a modulation doped Al0.12Ga0.88SN/GaN Superlattice are introduced to improve ESD reliability in Nitrided-based LEDs. The basic idea of this structure is to spread pulse current when LEDs suffer ESD. The ESD-induced pulse current would be spread laterally in 2D electron gas made by Al0.12Ga0.88SN /GaN herterostructure. Therefore the probability of junction breakdown would be lower.",
author = "Wen, {T. C.} and Chang, {S. J.} and Su, {Y. K.} and Wu, {L. W.} and Kuo, {C. H.} and Hsu, {Y. P.} and Lai, {W. C.} and Sheu, {J. K.}",
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Wen, TC, Chang, SJ, Su, YK, Wu, LW, Kuo, CH, Hsu, YP, Lai, WC & Sheu, JK 2003, Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED. 於 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272004, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 77-78, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 03-12-10. https://doi.org/10.1109/ISDRS.2003.1272004

Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED. / Wen, T. C.; Chang, S. J.; Su, Y. K.; Wu, L. W.; Kuo, C. H.; Hsu, Y. P.; Lai, W. C.; Sheu, J. K.

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 77-78 1272004 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

研究成果: Conference contribution

TY - GEN

T1 - Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED

AU - Wen, T. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wu, L. W.

AU - Kuo, C. H.

AU - Hsu, Y. P.

AU - Lai, W. C.

AU - Sheu, J. K.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Electrostatic discharge (ESD) induced electrical pulse is one of the main reliability concerns of optoelectronic devices. In this paper, a modulation doped Al0.12Ga0.88SN/GaN Superlattice are introduced to improve ESD reliability in Nitrided-based LEDs. The basic idea of this structure is to spread pulse current when LEDs suffer ESD. The ESD-induced pulse current would be spread laterally in 2D electron gas made by Al0.12Ga0.88SN /GaN herterostructure. Therefore the probability of junction breakdown would be lower.

AB - Electrostatic discharge (ESD) induced electrical pulse is one of the main reliability concerns of optoelectronic devices. In this paper, a modulation doped Al0.12Ga0.88SN/GaN Superlattice are introduced to improve ESD reliability in Nitrided-based LEDs. The basic idea of this structure is to spread pulse current when LEDs suffer ESD. The ESD-induced pulse current would be spread laterally in 2D electron gas made by Al0.12Ga0.88SN /GaN herterostructure. Therefore the probability of junction breakdown would be lower.

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M3 - Conference contribution

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T3 - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

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BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

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Wen TC, Chang SJ, Su YK, Wu LW, Kuo CH, Hsu YP 等. Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED. 於 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 77-78. 1272004. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). https://doi.org/10.1109/ISDRS.2003.1272004