Improved extraction efficiency of light-emitting diodes by wet-etching modifying AZO surface roughness

Ting Wei Kuo, Shi Xiong Lin, Yueh Yu Hung, Jui Hong Horng, Mau-phon Houng

研究成果: Article

8 引文 (Scopus)

摘要

In this letter, the AlGaInP light-emitting diodes (LEDs) between the air and GaP layer are added to the textured ZnO:Al (AZO) films in order to improve light extraction of the device. At 20 mA, the relative luminous intensity of textured AZO LEDs is increased by 129.9% when compared with the conventional sample. Furthermore, the far-field radiation pattern was improved with intensity not only at 0°, but also from 60° to 300°. Due to loss of internal Fresnel efficiency and critical angle efficiency, textured AZO LEDs are significantly improved by the wet-etching technique. The surface treatment of AZO films generates surface texturing that is characterized as random crater. It presents a better far-field radiation pattern when compared with nontextured AZO films. This letter has demonstrated the far-field radiation pattern and the theory for enhancing light emission efficiency of LEDs.

原文English
文章編號5686915
頁(從 - 到)362-364
頁數3
期刊IEEE Photonics Technology Letters
23
發行號6
DOIs
出版狀態Published - 2011 三月 14

指紋

Wet etching
Light emitting diodes
surface roughness
light emitting diodes
Surface roughness
etching
far fields
radiation
Texturing
Light emission
surface treatment
craters
luminous intensity
light emission
Surface treatment
air
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Kuo, Ting Wei ; Lin, Shi Xiong ; Hung, Yueh Yu ; Horng, Jui Hong ; Houng, Mau-phon. / Improved extraction efficiency of light-emitting diodes by wet-etching modifying AZO surface roughness. 於: IEEE Photonics Technology Letters. 2011 ; 卷 23, 編號 6. 頁 362-364.
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abstract = "In this letter, the AlGaInP light-emitting diodes (LEDs) between the air and GaP layer are added to the textured ZnO:Al (AZO) films in order to improve light extraction of the device. At 20 mA, the relative luminous intensity of textured AZO LEDs is increased by 129.9{\%} when compared with the conventional sample. Furthermore, the far-field radiation pattern was improved with intensity not only at 0°, but also from 60° to 300°. Due to loss of internal Fresnel efficiency and critical angle efficiency, textured AZO LEDs are significantly improved by the wet-etching technique. The surface treatment of AZO films generates surface texturing that is characterized as random crater. It presents a better far-field radiation pattern when compared with nontextured AZO films. This letter has demonstrated the far-field radiation pattern and the theory for enhancing light emission efficiency of LEDs.",
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Improved extraction efficiency of light-emitting diodes by wet-etching modifying AZO surface roughness. / Kuo, Ting Wei; Lin, Shi Xiong; Hung, Yueh Yu; Horng, Jui Hong; Houng, Mau-phon.

於: IEEE Photonics Technology Letters, 卷 23, 編號 6, 5686915, 14.03.2011, p. 362-364.

研究成果: Article

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