TY - GEN
T1 - Improved formal passivations of pseudomorphic high electron mobility transistors
AU - Chen, Li Yang
AU - Cheng, Shiou Ying
AU - Chu, Kuei Yi
AU - Tsai, Jung Hui
AU - Chen, Tzu Pin
AU - Tsai, Tsung Han
AU - Liu, Wen Chau
PY - 2008/9/8
Y1 - 2008/9/8
N2 - Temperature-dependent characteristics of high electron mobility transistors (HEMTs) with sulfur and SiNx passivations are comprehensively studied and demonstrated. Experimentally, for the studied device with formal passivations, better DC and microwave characteristics are obtained over wide operating temperature range. In particular, as compared with the device only with sulfur passivation, the slightly degradations of device performance are caused by the temperature stress during the deposition of SiNx layer and presence of surface traps at the SiNx/AlGaAs interface. Based on these good results, the formal-passivated HEMT is expected to exhibit relatively better long-term operation stability and reliable device characteristics.
AB - Temperature-dependent characteristics of high electron mobility transistors (HEMTs) with sulfur and SiNx passivations are comprehensively studied and demonstrated. Experimentally, for the studied device with formal passivations, better DC and microwave characteristics are obtained over wide operating temperature range. In particular, as compared with the device only with sulfur passivation, the slightly degradations of device performance are caused by the temperature stress during the deposition of SiNx layer and presence of surface traps at the SiNx/AlGaAs interface. Based on these good results, the formal-passivated HEMT is expected to exhibit relatively better long-term operation stability and reliable device characteristics.
UR - http://www.scopus.com/inward/record.url?scp=50849108853&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50849108853&partnerID=8YFLogxK
U2 - 10.1109/IWJT.2008.4540046
DO - 10.1109/IWJT.2008.4540046
M3 - Conference contribution
AN - SCOPUS:50849108853
SN - 9781424417384
T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
SP - 183
EP - 186
BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
T2 - IWJT-2008 - International Workshop on Junction Technology
Y2 - 15 May 2008 through 16 May 2008
ER -