Improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers

Y. S. Lin, W. C. Hsu, S. Y. Lu, J. S. Su, W. Lin

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Three types of InGaP/GaAs heterojunction-emitter bipolar transistors (HEBTs) have been grown by low-pressure metalorganic chemical vapor deposition. The current gains are 18, 40, and 55 for the conventional, single δ-doped, and double δ-doped HEBTs, respectively. Moreover, the offset voltage of the double δ-doped structure is as low as 70 mV. Experimental results demonstrated that the current gain and offset voltage can be improved by using the δ-doped emitter structure and undoped spacers on both sides of the base.

原文English
頁(從 - 到)91-95
頁數5
期刊Materials Chemistry and Physics
59
發行號1
DOIs
出版狀態Published - 1999 4月 30

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學

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