Improved hydrogen detection sensitivity of a Pt/Ga2O 3/GaN diode

Jheng Tai Yan, Chun Yen Tseng, Chia Hsun Chen, Ching Ting Lee

研究成果: Conference article

3 引文 斯高帕斯(Scopus)

摘要

The Pt/Ga2O3/GaN diodes were fabricated in which the Ga2O3 oxide layers were directly grown on GaN layer using a photoelectrochemical method. Then, the Ga2O3 oxide films were annealed in O2 ambiance at 700 °C for 2 hours to perform the β-Ga2O3 crystalline phases. The hydrogen sensing characteristics of Pt/GaN (metal-semiconductor, MS) and Pt/β-Ga 2O3/GaN (metal-insulator-semiconductor, MIS) diodes under hydrogen-containing ambiance were studied in an air atmosphere. Compared with the MS devices, the MIS devices exhibited better hydrogen sensing ability. The result demonstrates that the β-Ga2O3 layer plays an important role in the hydrogen sensing of the GaN based MIS diodes.

原文English
文章編號721612
期刊Proceedings of SPIE - The International Society for Optical Engineering
7216
DOIs
出版狀態Published - 2009 五月 5
事件Gallium Nitride Materials and Devices IV - San Jose, CA, United States
持續時間: 2009 一月 262009 一月 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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