Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector

Yu Chih Chang, Jian Kai Liou, Wen Chau Liu

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.

原文English
文章編號6504470
頁(從 - 到)777-779
頁數3
期刊IEEE Electron Device Letters
34
發行號6
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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