Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate

Yu Hsiang Yeh, Jinn-Kong Sheu, Ming Lun Lee, Po Cheng Chen, Yu Chen Yang, Cheng Hsiung Yen, Wei-Chi Lai

研究成果: Conference contribution

摘要

GaN-based flip-chip light emitting diodes (FC-LEDs) with embedded air voids grown on a selective-area Arimplanted AlN/sapphire (AIAS) substrate was demonstrated in this study. The proposed FC LED with an embedded light scattering layer can destroy the light interference and thereby increase the LEE of GaN-based flip-chip LEDs. The epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on AIAS was greater than that of LEDs grown on implantation free sapphire substrates. At an injection current of 700 mA, the output power of LEDs grown on AIAS was enhanced by 20% compared with those of LEDs without embedded air voids. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs. This study on FC LEDs with embedded light-scattering layer highlights the potential application of these LEDs as an alternative to conventional patterned sapphire substrates for improving the LEE of GaN/sapphire-based LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 μm, the Lop could be enhanced over 60%.

原文English
主出版物標題Thirteenth International Conference on Solid State Lighting
編輯Jianzhong Jiao, Matthew H. Kane, Nikolaus Dietz, Jian-Jang Huang
發行者SPIE
ISBN(電子)9781628412178
DOIs
出版狀態Published - 2014 一月 1
事件13th International Conference on Solid State Lighting - San Diego, United States
持續時間: 2014 八月 202014 八月 21

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9190
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Other

Other13th International Conference on Solid State Lighting
國家United States
城市San Diego
期間14-08-2014-08-21

指紋

Flip chip
Nitrides
Aluminum Oxide
Sapphire
Voids
Diode
nitrides
Light emitting diodes
voids
sapphire
light emitting diodes
chips
Substrate
Aluminum Nitride
air
Substrates
Air
Implantation
Light Scattering
Output

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此文

Yeh, Y. H., Sheu, J-K., Lee, M. L., Chen, P. C., Yang, Y. C., Yen, C. H., & Lai, W-C. (2014). Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate. 於 J. Jiao, M. H. Kane, N. Dietz, & J-J. Huang (編輯), Thirteenth International Conference on Solid State Lighting [91900Z] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9190). SPIE. https://doi.org/10.1117/12.2060386
Yeh, Yu Hsiang ; Sheu, Jinn-Kong ; Lee, Ming Lun ; Chen, Po Cheng ; Yang, Yu Chen ; Yen, Cheng Hsiung ; Lai, Wei-Chi. / Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate. Thirteenth International Conference on Solid State Lighting. 編輯 / Jianzhong Jiao ; Matthew H. Kane ; Nikolaus Dietz ; Jian-Jang Huang. SPIE, 2014. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{24c41ef51aa74ff2a7f15789d5f209d8,
title = "Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate",
abstract = "GaN-based flip-chip light emitting diodes (FC-LEDs) with embedded air voids grown on a selective-area Arimplanted AlN/sapphire (AIAS) substrate was demonstrated in this study. The proposed FC LED with an embedded light scattering layer can destroy the light interference and thereby increase the LEE of GaN-based flip-chip LEDs. The epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on AIAS was greater than that of LEDs grown on implantation free sapphire substrates. At an injection current of 700 mA, the output power of LEDs grown on AIAS was enhanced by 20{\%} compared with those of LEDs without embedded air voids. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs. This study on FC LEDs with embedded light-scattering layer highlights the potential application of these LEDs as an alternative to conventional patterned sapphire substrates for improving the LEE of GaN/sapphire-based LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 μm, the Lop could be enhanced over 60{\%}.",
author = "Yeh, {Yu Hsiang} and Jinn-Kong Sheu and Lee, {Ming Lun} and Chen, {Po Cheng} and Yang, {Yu Chen} and Yen, {Cheng Hsiung} and Wei-Chi Lai",
year = "2014",
month = "1",
day = "1",
doi = "10.1117/12.2060386",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Jianzhong Jiao and Kane, {Matthew H.} and Nikolaus Dietz and Jian-Jang Huang",
booktitle = "Thirteenth International Conference on Solid State Lighting",
address = "United States",

}

Yeh, YH, Sheu, J-K, Lee, ML, Chen, PC, Yang, YC, Yen, CH & Lai, W-C 2014, Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate. 於 J Jiao, MH Kane, N Dietz & J-J Huang (編輯), Thirteenth International Conference on Solid State Lighting., 91900Z, Proceedings of SPIE - The International Society for Optical Engineering, 卷 9190, SPIE, 13th International Conference on Solid State Lighting, San Diego, United States, 14-08-20. https://doi.org/10.1117/12.2060386

Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate. / Yeh, Yu Hsiang; Sheu, Jinn-Kong; Lee, Ming Lun; Chen, Po Cheng; Yang, Yu Chen; Yen, Cheng Hsiung; Lai, Wei-Chi.

Thirteenth International Conference on Solid State Lighting. 編輯 / Jianzhong Jiao; Matthew H. Kane; Nikolaus Dietz; Jian-Jang Huang. SPIE, 2014. 91900Z (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9190).

研究成果: Conference contribution

TY - GEN

T1 - Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate

AU - Yeh, Yu Hsiang

AU - Sheu, Jinn-Kong

AU - Lee, Ming Lun

AU - Chen, Po Cheng

AU - Yang, Yu Chen

AU - Yen, Cheng Hsiung

AU - Lai, Wei-Chi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - GaN-based flip-chip light emitting diodes (FC-LEDs) with embedded air voids grown on a selective-area Arimplanted AlN/sapphire (AIAS) substrate was demonstrated in this study. The proposed FC LED with an embedded light scattering layer can destroy the light interference and thereby increase the LEE of GaN-based flip-chip LEDs. The epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on AIAS was greater than that of LEDs grown on implantation free sapphire substrates. At an injection current of 700 mA, the output power of LEDs grown on AIAS was enhanced by 20% compared with those of LEDs without embedded air voids. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs. This study on FC LEDs with embedded light-scattering layer highlights the potential application of these LEDs as an alternative to conventional patterned sapphire substrates for improving the LEE of GaN/sapphire-based LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 μm, the Lop could be enhanced over 60%.

AB - GaN-based flip-chip light emitting diodes (FC-LEDs) with embedded air voids grown on a selective-area Arimplanted AlN/sapphire (AIAS) substrate was demonstrated in this study. The proposed FC LED with an embedded light scattering layer can destroy the light interference and thereby increase the LEE of GaN-based flip-chip LEDs. The epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on AIAS was greater than that of LEDs grown on implantation free sapphire substrates. At an injection current of 700 mA, the output power of LEDs grown on AIAS was enhanced by 20% compared with those of LEDs without embedded air voids. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs. This study on FC LEDs with embedded light-scattering layer highlights the potential application of these LEDs as an alternative to conventional patterned sapphire substrates for improving the LEE of GaN/sapphire-based LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 μm, the Lop could be enhanced over 60%.

UR - http://www.scopus.com/inward/record.url?scp=84922715751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84922715751&partnerID=8YFLogxK

U2 - 10.1117/12.2060386

DO - 10.1117/12.2060386

M3 - Conference contribution

AN - SCOPUS:84922715751

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Thirteenth International Conference on Solid State Lighting

A2 - Jiao, Jianzhong

A2 - Kane, Matthew H.

A2 - Dietz, Nikolaus

A2 - Huang, Jian-Jang

PB - SPIE

ER -

Yeh YH, Sheu J-K, Lee ML, Chen PC, Yang YC, Yen CH 等. Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate. 於 Jiao J, Kane MH, Dietz N, Huang J-J, 編輯, Thirteenth International Conference on Solid State Lighting. SPIE. 2014. 91900Z. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2060386