Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer

Shui Jinn Wang, Pei Ren Wang, Der Ming Kuo, Hsiun Rong Kuo, Jian Shian Kuo

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

The use of a refractive index matching (RIM) structure with indium zinc oxide (IZO) transparent conduction layer and SiO2 nanotube (SiO 2-NT) arrays to improve light extraction of vertical structure KOH-etched GaN-based light emitting diodes (VLEDs) is demonstrated. Compared to regular VLED with KOH-roughened surface, it shows considerable gains in light emitted critical angle and light output power by 21.3° and 103% at 350 mA, respectively. These improvements could be attributed to the effectiveness of the IZO/SiO2-NT RIM scheme in ameliorating current crowding and significantly minimizing the total internal reflection effect.

原文English
文章編號131111
期刊Applied Physics Letters
99
發行號13
DOIs
出版狀態Published - 2011 九月 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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