Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

Huan Chung Wang; Huan Fu Su; Quang Ho Luc; Ching Ting Lee; Heng Tung Hsu; Edward Yi Chang

doi:10.1149/2.0251711jss

Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

Huan Chung Wang, Huan Fu Su, Quang Ho Luc, Ching Ting Lee, Heng Tung Hsu, Edward Yi Chang

光電科學與工程學系

研究成果: Editorial › 同行評審

4 引文斯高帕斯（Scopus）

摘要

An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (G_m) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader G_m distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

原文	English
頁（從 - 到）	S3106-S3109
期刊	ECS Journal of Solid State Science and Technology
卷	6
發行號	11
DOIs	https://doi.org/10.1149/2.0251711jss
出版狀態	Published - 2017

All Science Journal Classification (ASJC) codes

電子、光磁材料

存取文件

10.1149/2.0251711jss

其它文件與鏈接

引用此

@article{3d1a289a010c43c1a079312abdf07e6d,

title = "Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication",

abstract = "An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.",

author = "Wang, {Huan Chung} and Su, {Huan Fu} and Luc, {Quang Ho} and Lee, {Ching Ting} and Hsu, {Heng Tung} and Chang, {Edward Yi}",

note = "Funding Information: This work was supported by the National Chung-Shan Institute of Science & Technology, Taiwan, under grant No. NCSIST-103-V312 (106). Publisher Copyright: {\textcopyright} The Author(s) 2017.",

year = "2017",

doi = "10.1149/2.0251711jss",

language = "English",

volume = "6",

pages = "S3106--S3109",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "11",

}

TY - JOUR

T1 - Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

AU - Wang, Huan Chung

AU - Su, Huan Fu

AU - Luc, Quang Ho

AU - Lee, Ching Ting

AU - Hsu, Heng Tung

AU - Chang, Edward Yi

N1 - Funding Information: This work was supported by the National Chung-Shan Institute of Science & Technology, Taiwan, under grant No. NCSIST-103-V312 (106). Publisher Copyright: © The Author(s) 2017.

PY - 2017

Y1 - 2017

N2 - An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

AB - An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.

UR - http://www.scopus.com/inward/record.url?scp=85044204459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85044204459&partnerID=8YFLogxK

U2 - 10.1149/2.0251711jss

DO - 10.1149/2.0251711jss

M3 - Editorial

AN - SCOPUS:85044204459

VL - 6

SP - S3106-S3109

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 11

ER -

Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此