摘要
An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (G m ) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader G m distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.
| 原文 | English |
|---|---|
| 頁（從 - 到） | S3106-S3109 |
| 期刊 | ECS Journal of Solid State Science and Technology |
| 卷 | 6 |
| 發行號 | 11 |
| DOIs | |
| 出版狀態 | Published - 2017 一月 1 |
指紋
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
引用此文
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Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication. / Wang, Huan Chung; Su, Huan Fu; Luc, Quang Ho; Lee, Ching Ting; Hsu, Heng Tung; Chang, Edward Yi.
於: ECS Journal of Solid State Science and Technology, 卷 6, 編號 11, 01.01.2017, p. S3106-S3109.研究成果: Editorial
TY - JOUR
T1 - Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication
AU - Wang, Huan Chung
AU - Su, Huan Fu
AU - Luc, Quang Ho
AU - Lee, Ching Ting
AU - Hsu, Heng Tung
AU - Chang, Edward Yi
PY - 2017/1/1
Y1 - 2017/1/1
N2 - An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (G m ) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader G m distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.
AB - An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (G m ) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader G m distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications.
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U2 - 10.1149/2.0251711jss
DO - 10.1149/2.0251711jss
M3 - Editorial
AN - SCOPUS:85044204459
VL - 6
SP - S3106-S3109
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 11
ER -