Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

Kuan Wei Lee, Hsien Cheng Lin, Fang Ming Lee, Hou Kuei Huang, Yeong Her Wang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) with an oxide grown by liquid phase oxidation on the InGaAs capping layer without a gate recess exhibits a lower leakage current density with suppressed impact ionization, better microwave characteristics, and improved high frequency noise performance compared to the conventional MHEMT with a recessed gate. The improved high frequency performance is due to the lower gate-source and gate-drain capacitances of the InAlAs/InGaAs MOS-MHEMT. Reduced surface recombination and impact ionization may also contribute to the improved frequency response, noise performance, and associated gain.

原文English
文章編號203506
期刊Applied Physics Letters
96
發行號20
DOIs
出版狀態Published - 2010 五月 17

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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