Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Wen-Chau Liu, Kuo Hui Yu, Rong Chau Liu, Kun Wei Lin, Chin Chuan Cheng, Kuan Po Lin, Chih Hung Yen, Cheng Zu Wu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

A n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure has been applied to fabricate high-performance transistors. The studied heterostructure field-effect transistor exhibits a large barrier height, high breakdown voltage, low leakage current, and good temperature-dependent characteristics. Experimentally, for a 1×100 μm2 device, the gate-drain breakdown voltage and gate leakage current are 52 (31.5) V, and 37 μ A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. In addition, the high drain-source operation voltage over 20 V with low leakage current is obtained.

原文English
頁(從 - 到)967-969
頁數3
期刊Applied Physics Letters
79
發行號7
DOIs
出版狀態Published - 2001 8月 13

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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