@article{0a0a2d0b70894f4ba6573569e425426e,
title = "Improved optical and ESD characteristics for GaN-Based LEDs with an n --GaN Layer",
abstract = "Nitride-based light-emitting diodes (LEDs) with an n--GaN layer are proposed and fabricated. By providing a larger series resistance in the vertical direction, it was found that the n--GaN layer could enhance LED output intensity due to the enhanced current spreading. It was also found that LEDs with n--GaN layer thicknesses of 0.15, 0.2, and 0.25 μm could endure electrostatic discharge surges up to -1200, -1800, and -3000 V, respectively..",
author = "Chiang, {T. H.} and Chiou, {Y. Z.} and Chang, {S. J.} and Wang, {C. K.} and Ko, {T. K.} and Lin, {T. K.} and Chiu, {C. J.} and Chang, {S. P.}",
note = "Funding Information: Manuscript received May 11, 2010; revised July 10, 2010; accepted September 6, 2010. Date of publication September 23, 2010; date of current version March 9, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 98-D0204-6.",
year = "2011",
month = mar,
doi = "10.1109/TDMR.2010.2078511",
language = "English",
volume = "11",
pages = "76--80",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}