Improved output power of GaN-based blue LEDs by forming air voids on Ar-implanted sapphire substrate

Jinn-Kong Sheu, Yu Hsiang Yeh, Shang Ju Tu, Ming Lun Lee, P. C. Chen, Wei-Chi Lai

研究成果: Article

11 引文 (Scopus)

摘要

This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth and subsequent lateral growth because of different lattice constants between the implantation and implantation-free regions. As a result, air voids were formed at the GaN/sapphire interface, above the implanted regions and below the active layers of LEDs. We proposed the GaN layer growth mechanisms on the Ar-ISS, and characterized the LEDs with embedded air voids at the GaN/sapphire interface. Using a 20-mA current injection, the light output of the experimental LEDs was found to be 15% greater than that of conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/air void interfaces, which increases the probability of photons escaping from the LEDs.

原文English
文章編號6464504
頁(從 - 到)1318-1322
頁數5
期刊Journal of Lightwave Technology
31
發行號8
DOIs
出版狀態Published - 2013 三月 19

指紋

voids
sapphire
light emitting diodes
output
air
implantation
ion implantation
light scattering
injection
augmentation
photons

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此文

Sheu, Jinn-Kong ; Yeh, Yu Hsiang ; Tu, Shang Ju ; Lee, Ming Lun ; Chen, P. C. ; Lai, Wei-Chi. / Improved output power of GaN-based blue LEDs by forming air voids on Ar-implanted sapphire substrate. 於: Journal of Lightwave Technology. 2013 ; 卷 31, 編號 8. 頁 1318-1322.
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abstract = "This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth and subsequent lateral growth because of different lattice constants between the implantation and implantation-free regions. As a result, air voids were formed at the GaN/sapphire interface, above the implanted regions and below the active layers of LEDs. We proposed the GaN layer growth mechanisms on the Ar-ISS, and characterized the LEDs with embedded air voids at the GaN/sapphire interface. Using a 20-mA current injection, the light output of the experimental LEDs was found to be 15{\%} greater than that of conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/air void interfaces, which increases the probability of photons escaping from the LEDs.",
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Improved output power of GaN-based blue LEDs by forming air voids on Ar-implanted sapphire substrate. / Sheu, Jinn-Kong; Yeh, Yu Hsiang; Tu, Shang Ju; Lee, Ming Lun; Chen, P. C.; Lai, Wei-Chi.

於: Journal of Lightwave Technology, 卷 31, 編號 8, 6464504, 19.03.2013, p. 1318-1322.

研究成果: Article

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