Improved output power of GaN-based blue LEDs by forming air voids on Ar-implanted sapphire substrate

Jinn Kong Sheu, Yu Hsiang Yeh, Shang Ju Tu, Ming Lun Lee, P. C. Chen, Wei Chih Lai

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth and subsequent lateral growth because of different lattice constants between the implantation and implantation-free regions. As a result, air voids were formed at the GaN/sapphire interface, above the implanted regions and below the active layers of LEDs. We proposed the GaN layer growth mechanisms on the Ar-ISS, and characterized the LEDs with embedded air voids at the GaN/sapphire interface. Using a 20-mA current injection, the light output of the experimental LEDs was found to be 15% greater than that of conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/air void interfaces, which increases the probability of photons escaping from the LEDs.

原文English
文章編號6464504
頁(從 - 到)1318-1322
頁數5
期刊Journal of Lightwave Technology
31
發行號8
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學

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