Improved Oxide Properties by Anodization of Aluminum Films with Thin Sputtered Aluminum Oxide Overlays

S. G. Byeon, Y. Tzeng

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Aluminum oxide films ranging from 500 to 2500A in thickness are fabricated by anodizing aluminum films which are covered with thin sputtered aluminum oxide layers. The dielectric, electrical, and structural properties of these films are compared with those fabricated by means of either anodization or sputtering. The anodized aluminum thin films with initial sputtered oxide overlays have the advantages of both the high breakdown field strength of anodized film and the low dissipation factor of sputtered film. Improved properties for the anodized aluminum thin films with initial sputtered aluminum oxide overlays are discussed in comparison with oxide films prepared by the other two methods for applications to charge storage capacitors.

原文English
頁(從 - 到)2452-2458
頁數7
期刊Journal of the Electrochemical Society
135
發行號10
DOIs
出版狀態Published - 1988 10月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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