Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer

Chung Hsun Jang, Jinn Kong Sheu, J. T. Tsai, Shoou Jinn Chang, Wei Chih Lai, Ming Lun Lee, T. K. Ko, C. F. Shen, S. C. Shei

研究成果: Article

32 引文 (Scopus)

摘要

In this study, we demonstrate the effect of GaN-based blue light-emitting diodes (LEDs), using an InGaN layer inserted between the n-type GaN cladding layer and the active layer (InGaN/GaN multiple quantum well), on improving device performances. With a 20-mA current injection, the results indicate that the typical output power (or forward voltage) of light-emitting diodes grown with, and without, the InGaN insertion layer are approximately 18.1 (3.1) and 15.3(3.5) mW (V), respectively. This corresponds to an enhancement in output power (wall-plug efficiency) of around 18% (33%), with the use of the InGaN insertion layer. In addition, the electrostatic discharge (ESD) endurance voltages increased from 1000 V to 6000 V when the InGaN insertion layer was applied to the GaN/sapphire-based LEDs. The improvement of output power and ESD endurance voltage could be mainly due to the fact that the Si-doped InGaN insertion layer played the role of a current-spreading layer, which led to a lower possibility of junctions suffering a large current density in specific local sites.

原文English
文章編號5412126
頁(從 - 到)513-517
頁數5
期刊IEEE Journal of Quantum Electronics
46
發行號4
DOIs
出版狀態Published - 2010 三月 1

指紋

Light emitting diodes
insertion
Electrostatic discharge
light emitting diodes
Durability
Electric potential
Sapphire
Semiconductor quantum wells
endurance
Current density
output
electric potential
electrostatics
plugs
sapphire
quantum wells
injection
current density
augmentation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

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title = "Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer",
abstract = "In this study, we demonstrate the effect of GaN-based blue light-emitting diodes (LEDs), using an InGaN layer inserted between the n-type GaN cladding layer and the active layer (InGaN/GaN multiple quantum well), on improving device performances. With a 20-mA current injection, the results indicate that the typical output power (or forward voltage) of light-emitting diodes grown with, and without, the InGaN insertion layer are approximately 18.1 (3.1) and 15.3(3.5) mW (V), respectively. This corresponds to an enhancement in output power (wall-plug efficiency) of around 18{\%} (33{\%}), with the use of the InGaN insertion layer. In addition, the electrostatic discharge (ESD) endurance voltages increased from 1000 V to 6000 V when the InGaN insertion layer was applied to the GaN/sapphire-based LEDs. The improvement of output power and ESD endurance voltage could be mainly due to the fact that the Si-doped InGaN insertion layer played the role of a current-spreading layer, which led to a lower possibility of junctions suffering a large current density in specific local sites.",
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Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer. / Jang, Chung Hsun; Sheu, Jinn Kong; Tsai, J. T.; Chang, Shoou Jinn; Lai, Wei Chih; Lee, Ming Lun; Ko, T. K.; Shen, C. F.; Shei, S. C.

於: IEEE Journal of Quantum Electronics, 卷 46, 編號 4, 5412126, 01.03.2010, p. 513-517.

研究成果: Article

TY - JOUR

T1 - Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer

AU - Jang, Chung Hsun

AU - Sheu, Jinn Kong

AU - Tsai, J. T.

AU - Chang, Shoou Jinn

AU - Lai, Wei Chih

AU - Lee, Ming Lun

AU - Ko, T. K.

AU - Shen, C. F.

AU - Shei, S. C.

PY - 2010/3/1

Y1 - 2010/3/1

N2 - In this study, we demonstrate the effect of GaN-based blue light-emitting diodes (LEDs), using an InGaN layer inserted between the n-type GaN cladding layer and the active layer (InGaN/GaN multiple quantum well), on improving device performances. With a 20-mA current injection, the results indicate that the typical output power (or forward voltage) of light-emitting diodes grown with, and without, the InGaN insertion layer are approximately 18.1 (3.1) and 15.3(3.5) mW (V), respectively. This corresponds to an enhancement in output power (wall-plug efficiency) of around 18% (33%), with the use of the InGaN insertion layer. In addition, the electrostatic discharge (ESD) endurance voltages increased from 1000 V to 6000 V when the InGaN insertion layer was applied to the GaN/sapphire-based LEDs. The improvement of output power and ESD endurance voltage could be mainly due to the fact that the Si-doped InGaN insertion layer played the role of a current-spreading layer, which led to a lower possibility of junctions suffering a large current density in specific local sites.

AB - In this study, we demonstrate the effect of GaN-based blue light-emitting diodes (LEDs), using an InGaN layer inserted between the n-type GaN cladding layer and the active layer (InGaN/GaN multiple quantum well), on improving device performances. With a 20-mA current injection, the results indicate that the typical output power (or forward voltage) of light-emitting diodes grown with, and without, the InGaN insertion layer are approximately 18.1 (3.1) and 15.3(3.5) mW (V), respectively. This corresponds to an enhancement in output power (wall-plug efficiency) of around 18% (33%), with the use of the InGaN insertion layer. In addition, the electrostatic discharge (ESD) endurance voltages increased from 1000 V to 6000 V when the InGaN insertion layer was applied to the GaN/sapphire-based LEDs. The improvement of output power and ESD endurance voltage could be mainly due to the fact that the Si-doped InGaN insertion layer played the role of a current-spreading layer, which led to a lower possibility of junctions suffering a large current density in specific local sites.

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