Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2

P. C. Chang, Y. K. Su, K. J. Lee, C. L. Yu, S. J. Chang, C. H. Liu

研究成果: Article

10 引文 (Scopus)

摘要

Nitride-based UV Schottky barrier photodetectors (PDs) with Ir/Pt after annealing in O2 at 600 °C were fabricated successfully. With -5 V applied bias, the reverse leakage current of the annealed PD was 3.65 × 10-12 A. It was found that we could achieve the larger Schottky barrier height, the smaller dark current and the larger photocurrent to dark current contrast ratio by annealing Ir/Pt. After annealing, the Schottky barrier height increased from 0.91 eV to 1.03 eV and the ideality factor decreased from 1.58 to 1.16. Such a result indicated that the dominant current transport mechanism may be thermionic emission and the Schottky contact is near-ideal after annealing. These results could be attributed to the formation of IrO x phase. It was also found that responsivity and the UV-to-visible rejection ratio were 0.19 A/W and 1.05 × 103 after annealing with -6 V applied bias.

原文English
頁(從 - 到)S429-S431
期刊Journal of Alloys and Compounds
504
發行號SUPPL. 1
DOIs
出版狀態Published - 2010 八月 1

指紋

Photodetectors
Annealing
Dark currents
Thermionic emission
Photocurrents
Nitrides
Leakage currents

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

引用此文

Chang, P. C. ; Su, Y. K. ; Lee, K. J. ; Yu, C. L. ; Chang, S. J. ; Liu, C. H. / Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2. 於: Journal of Alloys and Compounds. 2010 ; 卷 504, 編號 SUPPL. 1. 頁 S429-S431.
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abstract = "Nitride-based UV Schottky barrier photodetectors (PDs) with Ir/Pt after annealing in O2 at 600 °C were fabricated successfully. With -5 V applied bias, the reverse leakage current of the annealed PD was 3.65 × 10-12 A. It was found that we could achieve the larger Schottky barrier height, the smaller dark current and the larger photocurrent to dark current contrast ratio by annealing Ir/Pt. After annealing, the Schottky barrier height increased from 0.91 eV to 1.03 eV and the ideality factor decreased from 1.58 to 1.16. Such a result indicated that the dominant current transport mechanism may be thermionic emission and the Schottky contact is near-ideal after annealing. These results could be attributed to the formation of IrO x phase. It was also found that responsivity and the UV-to-visible rejection ratio were 0.19 A/W and 1.05 × 103 after annealing with -6 V applied bias.",
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Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2. / Chang, P. C.; Su, Y. K.; Lee, K. J.; Yu, C. L.; Chang, S. J.; Liu, C. H.

於: Journal of Alloys and Compounds, 卷 504, 編號 SUPPL. 1, 01.08.2010, p. S429-S431.

研究成果: Article

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T1 - Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2

AU - Chang, P. C.

AU - Su, Y. K.

AU - Lee, K. J.

AU - Yu, C. L.

AU - Chang, S. J.

AU - Liu, C. H.

PY - 2010/8/1

Y1 - 2010/8/1

N2 - Nitride-based UV Schottky barrier photodetectors (PDs) with Ir/Pt after annealing in O2 at 600 °C were fabricated successfully. With -5 V applied bias, the reverse leakage current of the annealed PD was 3.65 × 10-12 A. It was found that we could achieve the larger Schottky barrier height, the smaller dark current and the larger photocurrent to dark current contrast ratio by annealing Ir/Pt. After annealing, the Schottky barrier height increased from 0.91 eV to 1.03 eV and the ideality factor decreased from 1.58 to 1.16. Such a result indicated that the dominant current transport mechanism may be thermionic emission and the Schottky contact is near-ideal after annealing. These results could be attributed to the formation of IrO x phase. It was also found that responsivity and the UV-to-visible rejection ratio were 0.19 A/W and 1.05 × 103 after annealing with -6 V applied bias.

AB - Nitride-based UV Schottky barrier photodetectors (PDs) with Ir/Pt after annealing in O2 at 600 °C were fabricated successfully. With -5 V applied bias, the reverse leakage current of the annealed PD was 3.65 × 10-12 A. It was found that we could achieve the larger Schottky barrier height, the smaller dark current and the larger photocurrent to dark current contrast ratio by annealing Ir/Pt. After annealing, the Schottky barrier height increased from 0.91 eV to 1.03 eV and the ideality factor decreased from 1.58 to 1.16. Such a result indicated that the dominant current transport mechanism may be thermionic emission and the Schottky contact is near-ideal after annealing. These results could be attributed to the formation of IrO x phase. It was also found that responsivity and the UV-to-visible rejection ratio were 0.19 A/W and 1.05 × 103 after annealing with -6 V applied bias.

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