Improved reliability and ESD characteristics of flip-chip GaN-based LEDs with internal inverse-parallel protection diodes

Shih Chang Shei, Jinn Kong Sheu, Chien Fu Shen

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

In this letter, a GaN/sapphire light-emitting diode (LED) structure was designed with improved electrostatic discharge (ESD) performance through the use of a shunt GaN ESD diode connected in inverse-parallel to the GaN LED. Thus, electrostatic charge can be discharged from the GaN LED through the shunt diode. We found that the ESD withstanding capability of GaN/sapphire LEDs incorporating this ESD-protection feature could be increased from several hundreds up to 3500 V in the human body model. Furthermore, flip-chip (FC) technology was also used to produce ESD-protected LEDs to further improve light output power and reliability. At a 20-mA current injection, the output power of the FC LEDs showed an improvement of around 60%. After a 1200-h aging test, the luminous intensities of the FC LEDs featuring an internal ESD-protection diode decreased by 4%. This decay percentage was far less than those of non-FC LEDs.

原文English
頁(從 - 到)346-349
頁數4
期刊IEEE Electron Device Letters
28
發行號5
DOIs
出版狀態Published - 2007 五月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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