Improved ultraviolet detection and device performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

Ching Sung Lee, Xue Cheng Yao, Yi Ping Huang, Wei-Chou Hsu

研究成果: Article

摘要

Ultraviolet (UV) detection and electrical characteristics of In0.17Al0.83N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with Al2O3 gate-dielectric and passivation formed by using ultrasonic spray pyrolysis deposition (USPD) are studied with respect to a conventional Schottky-gate HFET. The present MOS-HFET (Schottky-gate HFET) has demonstrated superior spectral responsivity (SR) of 360 (340) A/W at 350 nm at VGS = 5 (3) V and VDS = 6 (7) V, maximum drain-source saturation current density ( IDS, max) of 810.5 (546.6) mA/mm, maximum extrinsic transconductance of (gm, max) of 180.4 (221.2) mS/mm, gate-voltage swing (GVS) of 2.4 (0.5) V, on/off current ratio (Ion/Ioff) of 5.5 × 108 (1.7 × 105), two-terminal off-state gate-drain breakdown voltage (BVGD) of -158.5 (-127) V, three-terminal drain-source breakdown voltage (BVDS) of 162 (83.4) V at VGS = -10 V, and power-added efficiency (P.A.E.) of 26.3% (16.5%) at 2.4 GHz at 300 K. In addition to the improved device performance, this paper demonstrates, for the first time, the UV sensing based on an InAlN/AlN/GaN MOS-HFET design.

原文English
文章編號8671702
頁(從 - 到)430-434
頁數5
期刊IEEE Journal of the Electron Devices Society
7
DOIs
出版狀態Published - 2019 一月 1

指紋

Semiconductors
High electron mobility transistors
Oxides
Metals
Electric breakdown
Equipment and Supplies
Spray pyrolysis
Gate dielectrics
Transconductance
Passivation
Ultrasonics
Current density
Ions
Electric potential
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

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title = "Improved ultraviolet detection and device performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs",
abstract = "Ultraviolet (UV) detection and electrical characteristics of In0.17Al0.83N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with Al2O3 gate-dielectric and passivation formed by using ultrasonic spray pyrolysis deposition (USPD) are studied with respect to a conventional Schottky-gate HFET. The present MOS-HFET (Schottky-gate HFET) has demonstrated superior spectral responsivity (SR) of 360 (340) A/W at 350 nm at VGS = 5 (3) V and VDS = 6 (7) V, maximum drain-source saturation current density ( IDS, max) of 810.5 (546.6) mA/mm, maximum extrinsic transconductance of (gm, max) of 180.4 (221.2) mS/mm, gate-voltage swing (GVS) of 2.4 (0.5) V, on/off current ratio (Ion/Ioff) of 5.5 × 108 (1.7 × 105), two-terminal off-state gate-drain breakdown voltage (BVGD) of -158.5 (-127) V, three-terminal drain-source breakdown voltage (BVDS) of 162 (83.4) V at VGS = -10 V, and power-added efficiency (P.A.E.) of 26.3{\%} (16.5{\%}) at 2.4 GHz at 300 K. In addition to the improved device performance, this paper demonstrates, for the first time, the UV sensing based on an InAlN/AlN/GaN MOS-HFET design.",
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Improved ultraviolet detection and device performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs. / Lee, Ching Sung; Yao, Xue Cheng; Huang, Yi Ping; Hsu, Wei-Chou.

於: IEEE Journal of the Electron Devices Society, 卷 7, 8671702, 01.01.2019, p. 430-434.

研究成果: Article

TY - JOUR

T1 - Improved ultraviolet detection and device performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

AU - Lee, Ching Sung

AU - Yao, Xue Cheng

AU - Huang, Yi Ping

AU - Hsu, Wei-Chou

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Ultraviolet (UV) detection and electrical characteristics of In0.17Al0.83N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with Al2O3 gate-dielectric and passivation formed by using ultrasonic spray pyrolysis deposition (USPD) are studied with respect to a conventional Schottky-gate HFET. The present MOS-HFET (Schottky-gate HFET) has demonstrated superior spectral responsivity (SR) of 360 (340) A/W at 350 nm at VGS = 5 (3) V and VDS = 6 (7) V, maximum drain-source saturation current density ( IDS, max) of 810.5 (546.6) mA/mm, maximum extrinsic transconductance of (gm, max) of 180.4 (221.2) mS/mm, gate-voltage swing (GVS) of 2.4 (0.5) V, on/off current ratio (Ion/Ioff) of 5.5 × 108 (1.7 × 105), two-terminal off-state gate-drain breakdown voltage (BVGD) of -158.5 (-127) V, three-terminal drain-source breakdown voltage (BVDS) of 162 (83.4) V at VGS = -10 V, and power-added efficiency (P.A.E.) of 26.3% (16.5%) at 2.4 GHz at 300 K. In addition to the improved device performance, this paper demonstrates, for the first time, the UV sensing based on an InAlN/AlN/GaN MOS-HFET design.

AB - Ultraviolet (UV) detection and electrical characteristics of In0.17Al0.83N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with Al2O3 gate-dielectric and passivation formed by using ultrasonic spray pyrolysis deposition (USPD) are studied with respect to a conventional Schottky-gate HFET. The present MOS-HFET (Schottky-gate HFET) has demonstrated superior spectral responsivity (SR) of 360 (340) A/W at 350 nm at VGS = 5 (3) V and VDS = 6 (7) V, maximum drain-source saturation current density ( IDS, max) of 810.5 (546.6) mA/mm, maximum extrinsic transconductance of (gm, max) of 180.4 (221.2) mS/mm, gate-voltage swing (GVS) of 2.4 (0.5) V, on/off current ratio (Ion/Ioff) of 5.5 × 108 (1.7 × 105), two-terminal off-state gate-drain breakdown voltage (BVGD) of -158.5 (-127) V, three-terminal drain-source breakdown voltage (BVDS) of 162 (83.4) V at VGS = -10 V, and power-added efficiency (P.A.E.) of 26.3% (16.5%) at 2.4 GHz at 300 K. In addition to the improved device performance, this paper demonstrates, for the first time, the UV sensing based on an InAlN/AlN/GaN MOS-HFET design.

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JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

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