Improved ultraviolet detection and device performance of Al₂O₃-Dielectric In_0.17Al_0.83N/AlN/GaN MOS-HFETs

Engineering & Materials Science

• Oxide semiconductors 83%
• High electron mobility transistors 81%
• Aluminum oxide 67%
• Electric breakdown 52%
• Metals 44%
• Spray pyrolysis 36%
• Gate dielectrics 33%
• Passivation 28%
• Transconductance 27%
• Current density 22%
• Ions 21%
• Ultrasonics 19%
• Electric potential 12%

Medicine & Life Sciences

• Oxides 84%
• Metals 60%
• Equipment and Supplies 42%
• Pyrolysis 36%
• Ultrasonics 23%
• Ions 19%

Chemical Compounds

• Breakdown Voltage 69%
• Field Effect 69%
• Transconductance 35%
• Spray Pyrolysis 27%
• Chemical Passivation 23%
• Current Density 17%
• Ion 9%