摘要
The degraded performance of annealed ZnO-based photodetector can be improved by embedding an Ag interlayer. The Ag interlay converted to Ag2O during ZnO deposition. After Ag2O nanoparticles formed, the interface between ZnO and Ag2O produced band-bending to redistribute charges and increase the Schottky barrier between the electrical contact and ZnO. The excess Ag interlayer created lattice defects, causing the dark current to increase slightly. The increasing visible PL intensity of annealed ZnO, with the increasing Ag interlayer, clarified the transfer of the photo-generated electron.
原文 | English |
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文章編號 | 1350001 |
期刊 | Functional Materials Letters |
卷 | 6 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2013 2月 1 |
All Science Journal Classification (ASJC) codes
- 一般材料科學