Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface

X. F. Zeng, S. J. Chang, H. M. Lo, Shih Chang Shei

研究成果: Paper

摘要

In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.

原文English
頁面261-264
頁數4
出版狀態Published - 2014 一月 1
事件2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China
持續時間: 2013 十月 262013 十一月 1

Other

Other2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
國家China
城市Qingdao
期間13-10-2613-11-01

指紋

Light emitting diodes
Plasmas
Electrodes
Plasma
Testing
Injection

All Science Journal Classification (ASJC) codes

  • Management of Technology and Innovation

引用此文

Zeng, X. F., Chang, S. J., Lo, H. M., & Shei, S. C. (2014). Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface. 261-264. 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.
Zeng, X. F. ; Chang, S. J. ; Lo, H. M. ; Shei, Shih Chang. / Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface. 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.4 p.
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abstract = "In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13{\%} by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49{\%} and 55{\%} of the initial intensity, respectively.",
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Zeng, XF, Chang, SJ, Lo, HM & Shei, SC 2014, 'Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface' 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China, 13-10-26 - 13-11-01, 頁 261-264.

Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface. / Zeng, X. F.; Chang, S. J.; Lo, H. M.; Shei, Shih Chang.

2014. 261-264 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.

研究成果: Paper

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N2 - In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.

AB - In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.

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Zeng XF, Chang SJ, Lo HM, Shei SC. Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface. 2014. 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.