摘要
The influence of 248-nm KrF excimer laser annealing (ELA) with energy density between 0 and 400 mJ/cm2 on the electrical behavior of indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) is investigated. The experimental results show that the saturation mobility and subthreshold swing are improved from 12.4 cm2/Vs and 100 mV/dec without ELA to 17.8 cm2/Vs and 75 mV/dec, respectively, by applying a 300 mJ/cm2 laser pulse after the source/drain deposition, while maintaining an almost unchanged turn-off voltage. Such improvements are attributed to the increase in the oxygen vacancies and reduction in the bulk traps in the InGaZnO channel.
原文 | English |
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頁(從 - 到) | 899-902 |
頁數 | 4 |
期刊 | Electronic Materials Letters |
卷 | 10 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 2014 9月 1 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料