Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing

Hau Yuan Huang, Shui-Jinn Wang, Chien Hung Wu, Chien Yuan Lu

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

The influence of 248-nm KrF excimer laser annealing (ELA) with energy density between 0 and 400 mJ/cm2 on the electrical behavior of indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) is investigated. The experimental results show that the saturation mobility and subthreshold swing are improved from 12.4 cm2/Vs and 100 mV/dec without ELA to 17.8 cm2/Vs and 75 mV/dec, respectively, by applying a 300 mJ/cm2 laser pulse after the source/drain deposition, while maintaining an almost unchanged turn-off voltage. Such improvements are attributed to the increase in the oxygen vacancies and reduction in the bulk traps in the InGaZnO channel.

原文English
頁(從 - 到)899-902
頁數4
期刊Electronic Materials Letters
10
發行號5
DOIs
出版狀態Published - 2014 九月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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