Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers

Ru Chin Tu, Chun Ju Tun, Shyi Ming Pan, Hai Ping Liu, Ching En Tsai, J. K. Sheu, Chang Cheng Chuo, Te Chung Wang, Gou Chung Chi, In Gann Chen

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The 410-nm near-ultraviolet (near-UV) InGaN - GaN multiple quantum-wells light-emitting diodes (LEDs) with low-pressure-grown (200 mbar) and high-pressure-grown (400 mbar) Si-doped GaN underlying layers were grown on c-face sapphire substrates by metal-organic vapor phase epitaxy. Increasing the growth pressure during the initial growth of the underlying n-type GaN epilayers of the near-UV InGaN-GaN LEDs was found to reduce the amount of threading dislocations that originated from the GaN-sapphire interfaces. The electroluminescence intensity of LEDs with underlying GaN layers grown at a higher pressure was nearly five times larger than that of LED with layers grown at lower pressure. Additionally, two-order reduction of leakage current was also induced for the LEDs grown at a higher pressure.

原文English
頁(從 - 到)1050-1052
頁數3
期刊IEEE Photonics Technology Letters
15
發行號8
DOIs
出版狀態Published - 2003 八月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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