Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

Ru Chin Tu, Chun Ju Tun, Shyi Ming Pan, Chang Cheng Chuo, J. K. Sheu, Ching En Tsai, Te Chung Wang, Gou Chung Chi

研究成果: Article同行評審

39 引文 斯高帕斯(Scopus)

摘要

The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organic vapor phase epitaxy system. LEDs with AlGaN EB layers grown at low temperature (LT) were found more effectively to prevent electron overflow than conventional LEDs with an AlGaN one grown at high temperature (HT). The electroluminescent intensity of LEDs with an LT-grown AlGaN layer was nearly three times greater than that of LEDs with an HT-grown AlGaN. Additionally, the LEDs with an LT-grown AlGaN layer in H2 ambient were found to increase the leakage current by three orders of magnitude and reduce the efficiency of emission.

原文English
頁(從 - 到)1342-1344
頁數3
期刊IEEE Photonics Technology Letters
15
發行號10
DOIs
出版狀態Published - 2003 十月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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