The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organic vapor phase epitaxy system. LEDs with AlGaN EB layers grown at low temperature (LT) were found more effectively to prevent electron overflow than conventional LEDs with an AlGaN one grown at high temperature (HT). The electroluminescent intensity of LEDs with an LT-grown AlGaN layer was nearly three times greater than that of LEDs with an HT-grown AlGaN. Additionally, the LEDs with an LT-grown AlGaN layer in H2 ambient were found to increase the leakage current by three orders of magnitude and reduce the efficiency of emission.
All Science Journal Classification (ASJC) codes