Improvement of poly-pimple-induced device mismatch on 6T-SRAM at 65-nm CMOS technology

Chan Yuan Hu, Jone F. Chen, Shih Chih Chen, Shoou Jinn Chang, Kay Ming Lee, Chih Ping Lee

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

An incremental poly etching method can improve the poly pimple defect-induced device mismatch on the static noise margin (SNM) of 65-nm-node low-power 6T-SRAM. The improvement on circuit level is examined by the yield of scan chain and memory built-in self-test (MBIST), which is known to correlate well to process-induced defects.

原文English
文章編號5418971
頁(從 - 到)956-959
頁數4
期刊IEEE Transactions on Electron Devices
57
發行號4
DOIs
出版狀態Published - 2010 4月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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