A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( ID-VDS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 107 and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering