Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction

Zheng Dong Lin, Sheng Joue Young, Shoou-Jinn Chang

研究成果: Article同行評審

摘要

A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( ID-VDS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 107 and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.

原文English
文章編號7422774
頁(從 - 到)1749-1753
頁數5
期刊IEEE Transactions on Electron Devices
63
發行號4
DOIs
出版狀態Published - 2016 四月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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