Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source

W. T. Hsieh; Y. K. Fang; S. F. Ting; Y. S. Tsair; W. J. Lee; H. P. Wang

doi:10.1016/S0038-1101(02)00125-9

Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source

W. T. Hsieh, Y. K. Fang, S. F. Ting, Y. S. Tsair, W. J. Lee, H. P. Wang

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5 引文斯高帕斯（Scopus）

摘要

The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C₃H₈ as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.

原文	English
頁（從 - 到）	1949-1952
頁數	4
期刊	Solid-State Electronics
卷	46
發行號	11
DOIs	https://doi.org/10.1016/S0038-1101(02)00125-9
出版狀態	Published - 2002 11月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/S0038-1101(02)00125-9

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title = "Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source",

abstract = "The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.",

author = "Hsieh, {W. T.} and Fang, {Y. K.} and Ting, {S. F.} and Tsair, {Y. S.} and Lee, {W. J.} and Wang, {H. P.}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under contrast of NSC-89-2215-E-006-035. ",

year = "2002",

month = nov,

doi = "10.1016/S0038-1101(02)00125-9",

language = "English",

volume = "46",

pages = "1949--1952",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source

AU - Hsieh, W. T.

AU - Fang, Y. K.

AU - Ting, S. F.

AU - Tsair, Y. S.

AU - Lee, W. J.

AU - Wang, H. P.

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under contrast of NSC-89-2215-E-006-035.

PY - 2002/11

Y1 - 2002/11

N2 - The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.

AB - The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.

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U2 - 10.1016/S0038-1101(02)00125-9

DO - 10.1016/S0038-1101(02)00125-9

M3 - Article

AN - SCOPUS:0036838327

SN - 0038-1101

VL - 46

SP - 1949

EP - 1952

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source

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