Improving reactive ion etching selectivity of GaAs/AlGaAs with He plus

C. S. Lin, Y. K. Fang, S. F. Chen, Yu-Cheng Lin, M. C. Hsieh, C. C. Wang, H. K. Huang, C. L. Wu, C. S. Chang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A He plus reactive ion etching technology for selective etching GaAs/AlGaAs has been developed, for the first time. Etching selectivity was studied with SEM under different RF power, pressure, and reactant gases. Experimental results show the selectivity between GaAs and AlGaAs can be raised from 90 without He to 150 with He plus. Modeling has been proposed to interpret the improving mechanism.

原文English
頁(從 - 到)59-62
頁數4
期刊Materials Science in Semiconductor Processing
7
發行號1-2
DOIs
出版狀態Published - 2004 二月 1
對外發佈

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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